Opto-Electronics Group
Description: Optoelectronic group explores the theoretical modelling of the properties of the band orientation, threshold characteristics, current density, doping and pressure of the dilute III-N-V semiconductor well lasers. The group investigates the effects of the N and Sb atoms on the band-offset calculations of ternary, quaternary and quinary alloys. Model calculations include lattice-matched and lattice-mismatched quantum wells. The group also deals effects of the strain compensation of lattice mismatched layer, allows to operate the system at high temperatures, on band parameters. Group examines threshold current density, loss mechanims of the different alloys of semiconductor quantum well lasers and calculates the critical thickness of the lattice-mismatched semiconductor alloys on different substrates and with different orientations. Group is studying on Sb and N based lattice-mismatched and compensated quantum well lasers and quantum cascade lasers.
