Gaziantep University

GAZİANTEP UNIVERSITY

Türkçe
DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING 
HOMEPAGE
Announcements / Documents
EEE291 Exam Results 30 November 2017
Erasmus Duyurusu 07 November 2017
EP107 Groups 03 October 2017
Erasmus Yönergesi 15 March 2017
Güncel Ders Kataloğu 22 February 2017
Course Prerequisites 02 February 2017
Atelier - Laboratory
Basic Electricity LaboratoryElectronics LaboratoryElectrical Machines LaboratoryControl LaboratoryDigital Circuits LaboratoryTelecommunications LaboratoryMicrowave and Antennas LaboratoryPower Electronics LaboratoryHigh Voltage Research LaboratoryMicroprocessor LaboratoryComputer LaboratoryMaintenance and Repair CenterDigital Design Laboratory
Course Details
Course Title
Advanced Semiconductor Devices II
Code
EEE512
Course Info
Metal semiconductor contac. Current transfer theory in Schottky barriers. Schottky-barrier diode; high current, transient and high frequency behaviour. Other devices employing Schottky-barrier. M-I-S diode. Surface states, surface charges and space charges, M-I-S characteristics. Surface-space-charge region under nonequilibrium conditions. IGFET. Surface effeccts on P-N junction and Schottky-barrrier devices. Thin film devices, TFT, hot-electron transistor. Optoelectronic devices, Photodetector, solarcell, electroluminescent devices,LED's and semiconductor lasers.
Credit
3
ECTS
6
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